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MITSUBISHI TRANSISTOR MODULES
QM75DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
QM75DY-2HB
* * * * *
IC Collector current .......................... 75A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108 (7.5) 12 93 46.5
B2 E2
(7.5)
B2
10.5
E2
13 C2E1 6.5 23 8 15 C1 23 8 M5
E1 B1
34
E2
5
10.5
C1 C2E1 E2
Tab#110, t=0.5 6.5
37
30
23
LABEL
E1 B1
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 75 75 500 4 750 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 250 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=75A, IB=100mA -IC=75A (diode forward voltage) IC=75A, VCE=4V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=75A, IB1=150mA, IB2=-1.5A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 50 4.0 4.0 1.8 -- 2.5 15 3.0 0.25 1.2 0.13 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
200 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
Tj=25C 160
DC CURRENT GAIN hFE
VCE=10V
120
A IB=400m 0mA IB=20
A IB=100m A IB=40m A IB=20m
80
VCE=4.0V
40
Tj=25C Tj=125C 4 5 7 10 1 2 3 4 5 7 10 2 2 34
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
3 2
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
101 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 4 5 7 10 1
BASE CURRENT IB (A)
SATURATION VOLTAGE
10 0 7 5 4 3 2 10 -1 7 5 4 3 3.0
VBE(sat)
VCE(sat)
VCE=4.0V Tj=25C 3.4 3.8 4.2 4.6 5.0
IB=100mA Tj=25C Tj=125C 2 3 4 5 7 10 2 2 34
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5
IC=100A
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
2
ton, ts, tf (s)
4
3
IC=75A IC=50A
SWITCHING TIME
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1
ts tf
ton
2
1 0
Tj=25C Tj=125C
VCC=600V IB1=150mA IB2=-1.5A Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3
3 4 5 7 10 -22 3 4 5 710 -1 2 3 4 5 7 10 0 2 3
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
3 2
REVERSE BIAS SAFE OPERATING AREA
200
ts, tf (s)
ts
COLLECTOR CURRENT IC (A)
SWITCHING TIME
10 1 7 5 4 3 2 10 0 7 5 4 3
160
Tj=125C IB2=-1.5A
tf
120
80
VCC=600V IC=75A IB1=150mA Tj=25C Tj=125C 3 4 5 7 10 0 2 3 4 5 7 10 1 23
40
0
0
200
400
600
800
1000
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 3 7 5 3 2 10 2 7 5 3 2
1m
DERATING FACTOR OF F. B. S. O. A.
100
COLLECTOR CURRENT IC (A)
DERATING FACTOR (%)
tw=50S 100S
20 0
S
90 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
SECOND BREAKDOWN AREA
D
S
C
10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
80 100 120 140 160
COLLECTOR-EMITTER VOLTAGE
VCE (V)
CASE TEMPERATURE
TC (C)
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 0.32
0.28 0.24
Zth (j-c) (C/ W)
0.20 0.16 0.12 0.08 0.04 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
Tj=25C Tj=125C
0
0.4
0.8
1.2
1.6
2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75DY-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 800 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 10 2 Irr 10 1 trr (s)
Feb.1999
VCC=600V 10 1 IB1=0.15A 7 IB2=-1.5A 5 3 2
Qrr
10 0 10 0 trr 7 5 3 Tj=25C 2 Tj=125C 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A)
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 2.0 1.6 Zth (j-c) (C/ W)
1.2
0.8
0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s)

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